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MAPLST0810-030CF Datasheet(PDF) 1 Page - Tyco Electronics |
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MAPLST0810-030CF Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 4 page RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: POUT: 30W (P1dB) Gain: 18dB Efficiency: 50% Ruggedness: 10:1 VSWR @ 30W CW, 26V, 925MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability Package Style 5/14/04 Preliminary Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage V DSS 65 Vdc Gate—Source Voltage V GS 20 Vdc Total Power Dissipation @ TC = 25 °C P D 97 W Storage Temperature T STG -40 to +150 °C Junction Temperature T J +200 °C Characteristic Symbol Thermal Resistance, Junction to Case RΘJC Max 1.8 Unit ºC/W Thermal Characteristics NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag- ing MOS devices should be observed. P-239 Features |
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