RF Power Field Effect Transistor

LDMOS, 865 — 960 MHz, 30W, 26V

Designed for 865 to 960 MHz Broadband

Commercial and Base Station

Applications.

Typical CW RF Performance at 960MHz,

Gain: 18dB

Efficiency: 50%

Ruggedness: 10:1 VSWR @ 30W CW,

26V, 925MHz

High Gain, High Efficiency and High

Linearity

Excellent Thermal Stability

Package Style

5/14/04

Preliminary

Maximum Ratings

Parameter

Symbol

Rating

Units

Drain—Source Voltage

V

DSS

65

Gate—Source Voltage

V

GS

20

P

D

97

W

Storage Temperature

T

STG

-40 to +150

°C

Junction Temperature

T

J

+200

°C

Characteristic

Symbol

Thermal Resistance, Junction to Case

Max

1.8

Unit

ºC/W

Thermal Characteristics

NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-

ing MOS devices should be observed.

P-239

Features