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IRF640N Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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IRF640N Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 11 page ©2002 Fairchild Semiconductor Corporation Rev. B Figure 11. Normalized Drain To Source Breakdown Voltage vs Junction Temperature Figure 12. Capacitance vs Drain to Source Voltage Figure 13. Gate Charge Waveforms for Constant Gate Currents Typical Characteristic (Continued) 0.8 0.9 1.0 1.1 1.2 1.3 -80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 160 160 10 100 1000 10000 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≅ CDS + CGD 200 0 2 4 6 8 10 0 10 2030 40506070 VDD = 100V Qg, GATE CHARGE (nC) ID = 22A ID = 5A WAVEFORMS IN DESCENDING ORDER: Test Circuits and Waveforms Figure 14. Unclamped Energy Test Circuit Figure 15. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
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