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HMC516 Datasheet(PDF) 4 Page - Hittite Microwave Corporation

Part No. HMC516
Description  GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC516 Datasheet(HTML) 4 Page - Hittite Microwave Corporation

   
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+4 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 14 mW/°C above 85 °C)
1.25 W
Thermal Resistance
(channel to die bottom)
71 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Vdd (Vdc)
Idd (mA)
+2.5
61
+3.0
65
+3.5
69
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information [1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC516
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 17 GHz
v00.0904


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