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HBAT54X Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics

Part No. HBAT54X
Description  Silicon Schottky Barrier Double Diodes
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Maker  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
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HBAT54X Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics

   
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes
• HBAT54: Single Diode, also available as double diodes.
• HBAT54A: Common Anode.
• HBAT54C: Common Cathode.
• HBAT54S: Series Connected.
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................................................. -65~+125
°C
Junction Temperature .................................................................................................................................... +125
°C
• Maximum Power Dissipation
Total Power Dissipation (T
A=25°C) ............................................................................................................... 230 mW
• Maximum Voltages and Currents (T
A=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics (T
A=25°C)
Characteristic
Symbol
Condition
Min.
Max.
Unit
Reverse breakdown Voltage
V
(BR)
I
R=10uA
30
-
V
V
F(1)
I
F=0.1mA
-
240
mV
V
F(2)
I
F=1mA
-
320
mV
V
F(3)
I
F=10mA
-
400
mV
V
F(4)
I
F=30mA
-
500
mV
Forward Voltage
V
F(5)
I
F=100mA
-
1000
mV
Reverse Current
I
R
V
R=25V
-
2.0
uA
Total Capacitance
C
T
V
R=1V, f=1MHz
-
10
pF
Reverse Recovery Time
T
rr
I
F=IR=10mA, RL=100Ω,
measured at I
R=1mA
-5
nS
Diagram:
HBAT54
HBAT54A
HBAT54C
12
3
33
2
21
1
HBAT54S
12
3
SOT-23


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