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H05N60E Datasheet(PDF) 3 Page - Hi-Sincerity Mocroelectronics |
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H05N60E Datasheet(HTML) 3 Page - Hi-Sincerity Mocroelectronics |
3 / 5 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5 H05N60E, H05N60F HSMC Product Specification Characteristics Curve Typical On-Resistance & Drain Current 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 012 345678 9 10 11 12 ID, Drain Current (A) VGS=10V VGS=15V Drain Current Variation with Gate Voltage and Temperature 0 1 2 3 4 5 6 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, Gate-Source Voltage (V) Tc=25 oC VDS=10 V On Resistance Variation with Temperature 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 0 25 50 75 100 125 150 TC, Case Temperature ( oC) VGS=10V ID=3A Capacitance Characteristics 0 200 400 600 800 1000 0.1 1 10 100 VDS, Deain-Source Voltage (V) Ciss Crss Coss On-Region Characteristic 0 1 2 3 4 5 6 7 8 9 10 02468 10 VDS, Drain-Source Voltage (V) VGS=4V VGS=5V VGS=6V VGS=10V VGS=8V Maximum Safe Operating Area 0.1 1 10 10 100 1000 VDS, Drain-Source Voltage (V) 1ms 100ms 10ms |
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