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MGF4851A Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. MGF4851A
Description  SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MGF4851A Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(3/5)
June/2004
June/2004
TYPICAL CHARACTERISTICS
(Ta=25
°C)
0.00
5.00
10.00
15.00
20.00
-10
-5
0
5
10
Input Power Pin (dBm)
Po vs. Pin
VDS=2.5V
ID=25mA
f=12GHz
ID vs. VDS
ID vs. VGS
0
10
20
30
40
50
60
70
80
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
GATE TO SOURCE VOLTAGE
VGS(V)
VDS=2V
Po vs. Pin
0
5
10
15
20
-10
-5
0
5
10
Input Power Pin (dBm)
VDS=2V
ID=10mA
f=12GHz
0
10
20
30
40
50
60
70
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS(V)
VGS=-0.1V/STEP
VGS=0V


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