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AS4C4M4F1-50JC Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

Part # AS4C4M4F1-50JC
Description  5V 4M횞4 CMOS DRAM (Fast Page mode)
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C4M4F1-50JC Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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4/11/01; v.0.9
Alliance Semiconductor
P. 6 of 18
AS4C4M4F0
AS4C4M4F1
®
Write cycle
Read-modify-write cycle
Refresh cycle
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tWCS
Write command setup time
0
0
ns
11
tWCH
Write command hold time
10
10
ns
11
tWP
Write command pulse width
10
10
ns
tRWL
Write command to RAS lead time
10
10
ns
tCWL
Write command to CAS lead time
8
10
ns
tDS
Data-in setup time
0
0
ns
12
tDH
Data-in hold time
8
10
ns
12
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tRWC
Read-write cycle time
113
135
ns
tRWD
RAS to WE delay time
67
77
ns
11
tCWD
CAS to WE delay time
32
35
ns
11
tAWD
Column address to WE delay time
42
47
ns
11
Symbol
Parameter
-50
-60
Unit
Notes
Min
Max
Min
Max
tCSR
CAS setup time (CAS-before-RAS)5
5
ns
3
tCHR
CAS hold time (CAS-before-RAS)8
10
ns
3
tRPC
RAS precharge to CAS hold time
0
0
ns
tCPT
CAS precharge time
(CBR counter test)
10
10
ns


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