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GS78116B Datasheet(PDF) 1 Page - GSI Technology

Part No. GS78116B
Description  512K x 16 8Mb Asynchronous SRAM
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Maker  GSI [GSI Technology]
Homepage  http://www.gsitechnology.com
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GS78116B Datasheet(HTML) 1 Page - GSI Technology

 
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Rev: 1.02 9/2001
1/11
© 1999, Giga Semiconductor, Inc.
For latest documentation see http://www.gsitechnology.com.
GS78116B
512K x 16
8Mb Asynchronous SRAM
10, 12, 15 ns
3.3 V VDD
BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 10, 12, 15 ns
• CMOS low power operation: 300/250/220/180 mA at
minimum cycle time
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array
package
Description
The GS78116 is a high speed CMOS static RAM organized as
524,288-words by 16-bits. Static design eliminates the need for
external clocks or timing strobes. The GS78116 operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS78116 is available in 14 mm x 22 mm
BGA package.
Pin Descriptions
Symbol
Description
A0 to A18
Address input
DQ1 to DQ16
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
VDD
+3.3 V power supply
VSS
Ground
NC
No connect
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A0
CE
WE
OE
DQ1
A18
Block Diagram
DQ16


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