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GS8160E18BT-200 Datasheet(PDF) 1 Page - GSI Technology |
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GS8160E18BT-200 Datasheet(HTML) 1 Page - GSI Technology |
1 / 23 page GS8160E18/32/36BT-250/200/150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 100-Pin TQFP Commercial Temp Industrial Temp Rev: 1.03 9/2005 1/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Features • FT pin for user-configurable flow through or pipeline opera- tion • Dual Cycle Deselect (DCD) operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP package • RoHS-compliant 100-lead TQFP package available Functional Description Applications The GS8160E18/32/36BT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Controls Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising- edge-triggered Data Output Register. DCD Pipelined Reads The GS8160E18/32/36BT is a DCD (Dual Cycle Deselect) pipelined synchronous SRAM. SCD (Single Cycle Deselect) versions are also available. DCD SRAMs pipeline disable commands to the same degree as read commands. DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS8160E18/32/36BT operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuits and are 3.3 V and 2.5 V compatible. Parameter Synopsis -250 -200 -150 Unit Pipeline 3-1-1-1 tKQ tCycle 2.5 4.0 3.0 5.0 3.8 6.7 ns ns Curr (x18) Curr (x32/x36) 295 345 245 285 200 225 mA mA Flow Through 2-1-1-1 tKQ tCycle 5.5 5.5 6.5 6.5 7.5 7.5 ns ns Curr (x18) Curr (x32/x36) 225 255 200 220 185 205 mA mA |
Similar Part No. - GS8160E18BT-200 |
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Similar Description - GS8160E18BT-200 |
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