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K6R4016V1C-I15 Datasheet(PDF) 9 Page - Samsung semiconductor |
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K6R4016V1C-I15 Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 11 page K6R4016V1C-C/C-L, K6R4016V1C-I/C-P CMOS SRAM PRELIMPreliminaryPPPPPPPPPINARY Rev 5.0 - 9 - September 2001 FUNCTIONAL DESCRIPTION * X means Don ′t Care. CS WE OE LB UB Mode I/O Pin Supply Current I/O1~I/O8 I/O9~I/O16 H X X* X X Not Select High-Z High-Z ISB, ISB1 L H H X X Output Disable High-Z High-Z ICC L X X H H L H L L H Read DOUT High-Z ICC H L High-Z DOUT L L DOUT DOUT L L X L H Write DIN High-Z ICC H L High-Z DIN L L DIN DIN DATA RETENTION CHARACTERISTICS*(TA=0 to 70 °C) * The above parameters are also guaranteed at industrial temperature range. Data Retention Characteristic is for L-ver only. Parameter Symbol Test Condition Min. Typ. Max. Unit VCC for Data Retention VDR CS ≥VCC - 0.2V 2.0 - 3.6 V Data Retention Current IDR VCC=3.0V, CS ≥VCC - 0.2V VIN ≥ VCC - 0.2V or VIN≤0.2V - - 1.0 mA VCC=2.0V, CS ≥VCC - 0.2V VIN ≥VCC - 0.2V or VIN≤0.2V - - 0.7 Data Retention Set-Up Time tSDR See Data Retention Wave form(below) 0 - - ns Recovery Time tRDR 5 - - ms DATA RETENTION WAVE FORM CS controlled VCC 3.0V VIH VDR CS GND Data Retention Mode CS ≥VCC - 0.2V tSDR tRDR |
Similar Part No. - K6R4016V1C-I15 |
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Similar Description - K6R4016V1C-I15 |
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