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RD18JSAB2 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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RD18JSAB2 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 3 page RD4.7JS ~ RD39JS SILICON ZENER DIODES VZ : 4.7 - 39 Volts PD : 400 mW FEATURES : * Complete 4.7 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Case: DO-34 Glass Case Weight: approx. 0.13g MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Symbol Value Unit Power Dissipation PD 400 mW Forward Current IF 150 mA Junction Temperature Range Tj - 55 to + 175 °C Storage Temperature Range Ts - 55 to + 175 °C Page 1 of 3 Rev. 02 : March 25, 2005 DO - 34 Glass 0.078 (2.0 )max. 0.118 (3.0) max. 0.019 (0.50)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. Cathode Mark 700 100 200 300 400 500 600 0 0 25 50 75 100 125 150 175 200 Ambient Temperture , Ta ( °C) Derating Curve |
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