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STBN06I Datasheet(PDF) 4 Page - EIC discrete Semiconductors

Part No. STBN06I
Description  SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
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Maker  EIC [EIC discrete Semiconductors]
Homepage  http://www.eicsemi.com
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STBN06I Datasheet(HTML) 4 Page - EIC discrete Semiconductors

   
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RATING AND CHARACTERISTIC CURVES ( STBN06I - STBN5D0 )
FIG.1 - PULSE DERATING CURVE
FIG.2 - PULSE WAVEFORM
0
25
50
75
100
125
150
175
Ta, AMBIENT TEMPERATURE, (
°C)
FIG.3 - STEADY STATE POWER DERATING
FIG.4 - PULSE RATING CURVE
Page 4 of 4
Rev. 04 : March 25, 2005
80
60
40
20
120
5.00
100
10
0
1.25
3.75
0
0.1
2.50
1.0
tp, PULSE W IDTH
100
100
125
175
0
25
50
75
150
0.1
µs
1.0
µs
10
µs
100
µs
10ms
1.0ms
200
TL, LEAD TEMPERATURE (
°C)
tp
50
100
0
Tr = 10
µs
Peak Value
IRSM
Half Value - IRSM
T, TIME(ms)
1.0
2.0
3.0
4.0
0
2
TJ=25
°C
Pulse W idth (tp) is defined
as that point where the peak
current decays to 50%
of IRSM
10X1000 W aveform
as defined by R.E.A.
Single Phase Half W ave
60 Hz Resistive or Inductive load


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