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STB606I Datasheet(PDF) 3 Page - EIC discrete Semiconductors

Part No. STB606I
Description  SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

STB606I Datasheet(HTML) 3 Page - EIC discrete Semiconductors

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ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified
Breakdown Voltage @ It
W orking Peak
Maximum
Maximum
Maximum
Maximum
( Note 1 )
Reverse
Reverse Leakage
Reverse
Clamping
Temperature
TYPE
Voltage
@ VRWM
Current
Voltage @ IRSM
Co-efficient
VBR (V)
It
VRWM
IR
IRSM
VRSM
of VBR
Min.
Max.
(mA)
(V)
(
µA)
(A)
(V)
(% /
°C)
STB6062
55.8
68.2
1.0
50.2
5.0
6.8
89.0
0.104
STB6562
58.9
65.1
1.0
53.0
5.0
7.1
85.0
0.104
STB6068
61.2
74.8
1.0
55.1
5.0
6.1
98.0
0.104
STB6568
64.6
71.4
1.0
58.1
5.0
6.5
92.0
0.104
STB6075
67.5
82.5
1.0
60.7
5.0
5.5
108
0.105
STB6575
71.3
78.8
1.0
64.1
5.0
5.8
103
0.105
STB6082
73.8
90.2
1.0
66.4
5.0
5.1
118
0.105
STB6582
77.9
86.1
1.0
70.1
5.0
5.3
113
0.105
STB6091
81.9
100
1.0
73.7
5.0
4.5
131
0.106
STB6591
86.5
95.5
1.0
77.8
5.0
4.8
125
0.106
STB60B0
90.0
110
1.0
81.0
5.0
4.2
144
0.106
STB65B0
95.0
105
1.0
85.5
5.0
4.4
137
0.106
STB60B1
99.0
121
1.0
89.2
5.0
3.8
158
0.107
STB65B1
105
116
1.0
94.0
5.0
4.0
152
0.107
STB60B2
108
132
1.0
97.2
5.0
3.5
173
0.107
STB65B2
114
126
1.0
102
5.0
3.6
165
0.107
STB60B3
117
143
1.0
106
5.0
3.2
187
0.107
STB65B3
124
137
1.0
111
5.0
3.3
179
0.107
STB60B5
135
165
1.0
121
5.0
2.8
215
0.108
STB65B5
143
158
1.0
128
5.0
2.9
207
0.108
STB60B6
144
176
1.0
130
5.0
2.6
230
0.108
STB65B6
152
168
1.0
136
5.0
2.7
219
0.108
STB60B7
153
187
1.0
138
5.0
2.5
244
0.108
STB65B7
162
179
1.0
145
5.0
2.6
234
0.108
STB60B8
162
198
1.0
146
5.0
2.3
258
0.108
STB65B8
171
189
1.0
154
5.0
2.4
246
0.108
STB60D0
180
220
1.0
162
5.0
2.1
287
0.108
STB65D0
190
210
1.0
171
5.0
2.2
274
0.108
STB60D2
198
242
1.0
175
5.0
1.75
344
0.108
STB65D2
209
231
1.0
185
5.0
1.83
328
0.108
STB60D5
225
275
1.0
202
5.0
1.67
360
0.110
STB65D5
237
263
1.0
214
5.0
1.75
344
0.110
STB60E0
270
330
1.0
243
5.0
1.40
430
0.110
STB65E0
285
315
1.0
256
5.0
1.45
414
0.110
STB60E5
315
385
1.0
284
5.0
1.20
504
0.110
STB65E5
332
368
1.0
300
5.0
1.25
482
0.110
STB60G0
360
440
1.0
324
5.0
1.05
574
0.110
STB65G0
380
420
1.0
342
5.0
1.10
548
0.110
STB60G4
396
484
1.0
356
5.0
0.95
631
0.110
STB65G4
418
462
1.0
376
5.0
1.00
602
0.110
Note:
( 1 ) VBR measured after It applied for 300
µs., It = square wave pulse or equivalent.
( 2 ) "STB" will be omitted in marking on the diode.
Page 3 of 4
Rev. 03 : March 25, 2005


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