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2PD601A Datasheet(PDF) 2 Page - NXP Semiconductors |
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2PD601A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 23 2 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES • Low current (max. 100 mA) • Low voltage (max. 50 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in an SC-59 plastic package. PNP complement: 2PB709A. MARKING TYPE NUMBER MARKING CODE 2PD601AQ ZQ 2PD601AR ZR 2PD601AS ZS PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SC-59) and symbol. handbook, halfpage 12 1 3 2 3 MAM321 Top view LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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