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HSS101 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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HSS101 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page HSS101 SCHOTTKY BARRIER DIODE FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol Value Unit Reverse Voltage VR 30 V Average Rectified Current Io 35 mA Power Dissipation PD 150 mW Junction Temperature TJ 100 °C Storage temperature range Tstg -65 to + 100 °C Electrical Characteristics (Ta = 25 °C unless otherwise noted) Parameter Symbol Min Typ Max Unit Reverse Current IR VR = 10 V - - 10 nA Reverse Voltage VR IR = 10 µA 30 - - V VF IF = 10 mA - - 0.7 V Diode Capacitance Cd VR = 0V, f = 1MHz - - 1.5 pF Diode Capacitance Deviation ∆Cd VR = 0V, f = 1MHz - - 0.1 pF ∆V F IF = 10 mA - - 10 mV Page 1 of 2 Rev. 02 : March 24, 2005 Test Condition Parameter Forward Voltage Deviation Forward Voltage DO - 34 Glass 0.063 (1.6 )max. 0.119 (3.04) max. 0.022 (0.55)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. Cathode Mark |
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