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2N7002 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # 2N7002
Description  N-channel vertical D-MOS transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

2N7002 Datasheet(HTML) 4 Page - NXP Semiconductors

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April 1995
4
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 µA
VGS =0
60
90
V
IDSS
drain-source leakage current
VDS = 48 V
VGS =0
−−
1
µA
±IGSS
gate-source leakage current
VDS = 0
±VGS = 15 V
−−
10
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA
VGS =VDS
0.8
3V
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
3.5
5
ID = 75 mA
VGS = 4.5 V
−−
5.3
 Y
fs
transfer admittance
ID = 200 mA
VDS = 10 V
100
200
mS
Ciss
input capacitance
VDS = 10 V
VGS =0
f = 1 MHz
25
40
pF
Coss
output capacitance
VDS = 10 V
VGS =0
f = 1 MHz
22
30
pF
Crss
feedback capacitance
VDS = 10 V
VGS =0
f = 1 MHz
610
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 200 mA
VDD =50V
VGS = 0 to 10 V
−−
10
ns
toff
turn-off time
ID = 200 mA
VDD =50V
VGS = 0 to 10 V
−−
15
ns


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