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SI6542DQ Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI6542DQ
Description  Dual N- and P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6542DQ Datasheet(HTML) 4 Page - Vishay Siliconix

   
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Si6542DQ
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-4
Document Number: 70171
S-00873—Rev. F, 01-May-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
–1.0
–0.5
0.0
0.5
1.0
–50
–25
0
25
50
75
100
125
150
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
TJ – Temperature (_C)
Time (sec)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
02468
10
TJ = 150_C
TJ = 25_C
ID = 2.5 A
ID = 250 µA
20
10
1.0
0.4
0.6
0.8
1.6
1.0
1.2
1.4
120
100
80
60
40
20
0
0.001
0.010
0.100
1.000
10.000
2
1
0.1
0.01
10–4
10–3
10–2
10–1
110
30
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 125_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
Notes:
4. Surface Mounted
PDM
t2


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