HMS51232M4G-12 datasheet(6/10 Pages) HANBIT

Part #	HMS51232M4G-12

Description	Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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6 / 10 page

HANBit

HSD4M64B4W

URLwww.hbe.co.kr

6

HANBit Electronics Co.,Ltd.

Rev.0.0 (March / 2002)

ICC2NS

CKE

≥ V

IH(min)

CLK

≤ V

IL(max),

tCC=∞

Input signals are stable

24

ICC3P

CKE

≤ V

IL(max), tCC=10ns

12

Active

standby

current

in

power-down mode

ICC3PS

CKE&CLK

≤ V

IL(max)

tCC=∞

12

mA

ICC3N

CKE

≥V

IH(min),

CS*

≥V

IH(min),

tCC=10ns

Input signals are changed

one time during 20ns

100

Active standby current in

non power-down mode

(One bank active)

ICC3NS

CKE

≥VIH(min)

CLK

≤VIL(max), t

CC=∞

Input signals are stable

60

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

540

520

440

mA

1

Refresh current

ICC5

tRC ≥ tRC(min)

540

520

440

mA

2

4

mA

Self refresh current

ICC6

CKE

≤ 0.2V

1.6

mA

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

AC OPERATING TEST CONDITIONS

(vcc = 3.3V

± 0.3V, TA = 0 to 70°C)

PARAMETER

Value

UNIT

AC Input levels (Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr/tf = 1/1

Ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig. 2

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