HMS25632Z8B-10 datasheet(6/9 Pages) HANBIT

Part #	HMS25632Z8B-10

Description	SRAM MODULE 1Mbyte (256K x 32-Bit) , 72-Pin

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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6 / 9 page

HANBit

HMS25632M8B/Z8B

HANBit Electronics Co.,Ltd.

6

TIMING WAVEFORM OF READ CYCLE ( /CE Controlled )

Notes (Read Cycle)

1. /WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL

levels.

4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device to device.

5. Transition is measured

± 200mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with /CE = VIL.

7. Address valid prior to coincident with /CE transition low.

TIMING WAVEFORM OF WRITE CYCLE (/OE = Clock )

tAA

tCO

tLZ(4,5

)

High-Z

lSB

50%

tPD

Address

/CE

/OE

Data Out

Vcc Supply

Current

tRC

tPU

lCC

tOE

tOLZ

tOH

tOHZ

tHZ(3,4,5)

tWC

Address

/OE

/CE

/WE

Data In

Data Out

tAW

tWR(5)

tCW(3)

tAS(4)

tWP(2)

tDW

tDH

High-Z

tOHZ(6)

High-Z

Data Valid

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HMS25632Z8B-10 Datasheet(PDF) 6 Page - Hanbit Electronics Co.,Ltd

HMS25632Z8B-10 Datasheet(HTML) 6 Page - Hanbit Electronics Co.,Ltd

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