PNP SILICON PLANAR EPITAXIAL TRANSISTORS

CP756 / CP757

TO-92

Plastic Package

Medium Power Transistors are Designed for Applications Requiring High Breakdown Voltage and Low Saturation Voltage

Complementary CN656 and CN657

DESCRIPTION

CP757

UNIT

Collector Base Voltage

300

V

Collector Emitter Voltage

300

V

Emitter Base Voltage

V

Peak Pulse Current

A

Collector Current Continuous

A

W

Derate Above 25ºC

mW/ºC

W

W

Operating and Storage Junction

Temperature Range

ºC

Thermal Resistance

Junction to Ambient

ºC/W

Junction to Ambient

ºC/W

Junction to Case

ºC/W

* Consult safe operating area graph for conditions.

**Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min

10mm x 10 mm, copper

2+ Device mounted on P.C.B with copper equal to 1sq.inch. Minimum

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector Base Voltage

CP756

200

V

CP757

300

V

Collector Emitter Voltage

CP756

200

V

CP757

300

V

Emitter Base Voltage

5.0

V

Collector Cut Off Current

CP756

100

nA

CP757

100

nA

Emitter Cut Off Current

100

nA

Collector Emitter Saturation Voltage

0.5

V

Base Emitter Saturation Voltage

1.0

V

Base Emitter On Voltage

1.0

V

DC Current Gain

50

40

Transition Frequency

30

MHz

Output Capacitance

20

pF

***Pulse conditions. Pulse Width=300

µµs. Duty Cycle<2%

CP756_757Rev_2 120406E

- 65 to +150

138.8

113.6

5

1.0

0.5

56.8

2.2

0.9

SYMBOL

CP756

200

200

7.2

1.1

E B

C

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company