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CMBT5088 Datasheet(PDF) 2 Page - Continental Device India Limited

Part No. CMBT5088
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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CMBT5088 Datasheet(HTML) 2 Page - Continental Device India Limited

   
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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
5088
5089
Collector–base voltage (open emitter)
VCBO
max.
35
30 V
Collector–emitter voltage (open base)
VCEO
max.
30
25 V
Emitter-base voltage (open collector)
VEBO
max.
4.5
V
Collector current (d.c.)
IC
max.
50
mA
Total power dissipation up to Tamb = 25 °C
Ptot*
max.
225
mW
Storage temperature
Tstg
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
417
°C/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
5088
5089
Collector cut–off current
IE = 0; VCB = 20 V
ICBO
<50
– nA
IE = 0; VCB = 15V
<
50 nA
Emitter cut–off current
IC = 0; VEB = 3 V
IEBO
<50
– nA
IC = 0; VEB = 4.5V
<
100 nA
Saturation voltages
IC = 10 mA; IB = 1 mA
VCEsat <
500
mV
VBEsat
<
800
mV
Collector capacitance at f = 100 KHz
Emitter guarded
IE = 0; VCB = 5V
Ccb
<
4.0
pF
Emitter capacitance at f = 100 KHz
Emitter guarded
IC = 0; VEB = 0.5V
Ceb
<10
pF
D.C. current gain
IC = 0.1 µA; VCE = 5 V
hFE
300-900
400-1200
IC = 1.0 mA; VCE = 5 V
hFE
>
350
450
IC = 10 mA; VCE = 5 V
hFE
>
300
400
Small signal current gain
IC = 1 mA; VCE = 5V; f = 1 KHz
hfe
350-1400
450-1800
Transition frequency at f = 20 MHz
IC = 500 µA; VCE = 5 V
fT
>50
MHz
Noise figure at RS = 10 kΩ
IC = 100 µA; VCE = 5 V
NF
<
3.0
2.0 dB
f = 10 Hz to 15.7 Hz
*FR-5 Board = 1.0 × 0.75 × 0.62 in.


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