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CMBT4401 Datasheet(PDF) 2 Page - Continental Device India Limited

Part No. CMBT4401
Description  SILICON PLANAR EPITAXIAL TRANSISTOR
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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CMBT4401 Datasheet(HTML) 2 Page - Continental Device India Limited

   
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Continental Device India Limited
Data Sheet
Page 2 of 3
THERMAL RESISTANCE
From junction to ambient
Rth j–a
=
500 K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter breakdown voltage
IC = 1.0 mA; IB = 0
V(BR)CEO >40 V
Collector–base breakdown voltage
IC = 100 µA; IE = 0
V(BR)CBO >60 V
Emitter–base breakdown voltage
IE = 100 µA; IC = 0
V(BR)EBO >6 V
Base cut–off current
VCE = 35 V; VEB = 0.4 V
IBEX
<
0.1
µA
Collector cut–off current
VCE = 35 V; VEB = 0.4 V
ICEX
<
0.1
µA
D.C. current gain
IC = 0.1 mA; VCE = 1 V
hFE
>20
IC = 1.0 mA; VCE = 1 V
hFE
>40
IC = 10 mA; VCE = 1 V
hFE
>80
IC = 150 mA; VCE = 1 V
hFE
100 to 300
IC = 500 mA; VCE = 2 V
hFE
>40
Saturation voltage
IC = 150 mA; IB = 15 mA
VCEsat
<
0.4 V
VBEsat
0.75 to 0.95 V
IC = 500 mA; IB = 50 mA
VCEsat
<
0.75 V
VBEsat
<
1.2 V
Transition frequency
f = 100 MHz; IC = 20 mA; VCE = 10 V
fT
>
250 MHz
Collector–base capacitance
IE = 0; VCB = 5 V; f = 100 kHz
Ccb
<8 pF
Emitter–base capacitance
IC = 0; VBE = 0.5 V; f = 100 kHz
Ceb
<30 pF
Input impedance; f = 1 kHz;
min.
1 k
IC = 1 mA; VCE = 10 V
hie
max.
8 k
Voltage feed–back ratio
min. 0.1 × 10–4
IC = 1 mA; VCE = 10 V; f = 1 kHz
hre
max. 30 × 10–4
Small–signal curent gain; f = 1 kHz;
IC = 1 mA; VCE = 10 V
hfe
min.
40
max.
500
CMBT4401


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