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CJD3439 Datasheet(PDF) 1 Page - Continental Device India Limited

Part No. CJD3439
Description  NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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CJD3439 Datasheet(HTML) 1 Page - Continental Device India Limited

   
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NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS
CJD3439
DPAK (TO-252)
Plastic Package
Designed for use in Line Operated Equipment Requiring High fT
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
UNIT
Collector Emitter Voltage
VCEO
V
Collector Base Voltage
VCBO
V
Emitter Base Voltage
VEBO
V
Collector Current Continuous
IC
A
Base Current
IB
mA
Total Power Dissipation at Tc=25ºC
PD
W
Derate Above 25ºC
W/ºC
Operating and Storage Junction
Temperature Range
Tj, Tstg
ºC
THERMAL CHARACTERISTICS
Junction to Case
Rth (j-c)
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter Sustaining Voltage
VCEO(sus)
IC=5mA, IB=0
350
V
Collector Cut Off Current
ICEO
VCE=300V, IB=0
20
µA
Collector Cut Off Current
ICEX
VCE=450V, VEB(off)=1.5V
500
µA
Collector Cut Off Current
ICBO
VCB=350V, IE=0
20
µA
Emitter Cut Off Current
IEBO
VBE=5V, IC=0
20
µA
DC Current Gain
hFE
IC=2mA, VCE=10V
30
IC=20mA, VCE=10V
15
200
Collector Emitter Saturation Voltage
VCE (sat)
IC=50mA, IB=4mA
0.5
V
Base Emitter Saturation Voltage
VBE (sat)
IC=50mA, IB=4mA
1.3
V
Base Emitter On Voltage
VBE (on)
IC=50mA, VCE=10V
0.8
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Current Gain Bandwidth Product
fT
IC=10mA, VCE=10V, f=5MHz
15
MHz
Output Capacitance
C0b
VCB=10V, IE=0, f=1MHz
10
pF
Small Signal Current Gain
hfe
IC=5mA, VCE=10V, f=1KHz
25
MARKING
XY= Date Code
CJD3439Rev300606E
150
VALUE
450
0.3
5.0
350
15
0.12
8.33
CDIL
CJD3439
XY
MX
- 65 to +150
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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