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2N1893 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 2N1893
Description  NPN medium power transistor
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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2N1893 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1997 Apr 17
3
Philips Semiconductors
Product specification
NPN medium power transistor
2N1893
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ = 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
120
V
VCEO
collector-emitter voltage
open base
80
V
VEBO
emitter-base voltage
open collector
7V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
800
mW
Tcase ≤ 100 °C
1.7
W
Tcase ≤ 25 °C
3W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
219
K/W
Rth j-c
thermal resistance from junction to case
58.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =90V
10
nA
IE = 0; VCB =90V; Tamb = 150 °C
15
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE =10V
20
IC = 10 mA; VCE =10V; Tamb = −55 °C20
IC = 10 mA; VCE = 10 V; note 1
35
IC = 150 mA; VCE = 10 V; note 1
40
120
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
900
mV
IC = 150 mA; IB = 15 mA; note 1
500
mV
VBEsat
base-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
1.2
V
IC = 150 mA; IB = 15 mA; note 1
1.3
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
15
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
85
pF


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