1998 Nov 10

3

Philips Semiconductors

Preliminary specification

Schottky barrier double diodes

1PS89SB14; 1PS89SB15;

1PS89SB16

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Note

THERMAL CHARACTERISTICS

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode unless otherwise specified

continuous reverse voltage

−

30

V

continuous forward current

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

−

600

mA

total power dissipation (per package)

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

125

°C

operating ambient temperature

−65

+125

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode unless otherwise specified

forward voltage

see Fig.5

240

mV

320

mV

400

mV

500

mV

800

mV

reverse current

2

µA

diode capacitance

10

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

500

K/W