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CZT7120 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT7120
Description  SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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PRELIMINAR
Y
PRELIMINAR
Y
MAXIMUM RATINGS: (TA=250C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
70
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
3.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
0
C
Thermal Resistance
ΘJA
62.5
0
C/W
ELECTRICAL CHARACTERISTICS: (TA=250C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=80V
1.0
µA
IEBO
VEB=5.0V
1.0
µA
BVCBO
IC=50µA
120
156
V
BVCEO
IC=10mA
70
118
V
BVEBO
IE=50µA
7.0
24
V
VCE(SAT)
IC=2.0A, IB=200mA
295
500
mV
VBE(ON)
IC=2.0A, VCE=1.0V
0.93
1.1
V
hFE
VCE=5.0V, IC=10mA
100
210
hFE
VCE=5.0V, IC=500mA
100
162
300
hFE
VCE=5.0V, IC=3.0A
40
65
fT
VCE=10V, IC=500mA, f=1.0MHz
8.0
MHz
CZT7120
SURFACE MOUNT
PNP SILICON SWITCHING POWER
TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R2 (17-June 2004)
DESCRIPTION:
The Central Semiconductor CZT7120 PNP
Switching Power Transistor, manufactured by
the epitaxial planar process, combines both
power and high speed switching characteristics
in a SOT-223 Surface Mount Package. Typical
applications include drivers, DC-DC converters,
and general fast switching applications.
MARKING CODE: FULL PART NUMBER




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