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CZT900K Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT900K
Description  SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT900K
type is an NPN silicon Darlington transistor man-
ufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring extremely high gain.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
1.0
A
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=30V
100
nA
BVCBO
IC=10µA
50
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100µA
10
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
900,000
hFE
VCE=5.0V, IC=100mA
900,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
CZT900K
SURFACE MOUNT
NPN EXTREMELY HIGH hFE
SILICON DARLINGTON TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R2 (17-June 2004)




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