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CZT853 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT853
Description  SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZT853
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
6.0
A
Power Dissipation
PD
3.0
W (Note 1)
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
41.7
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=150V
10
nA
ICER
VCE=150V, RBE ≤ 1kΩ
10
nA
ICBO
VCB=150V, TA=100°C
1.0
μA
IEBO
VEB=6.0V
10
nA
BVCBO
IC=100μA
200
220
V
BVCER
IC=10mA, RBE ≤ 1kΩ
200
210
V
BVCEO
IC=10mA
100
110
V
BVEBO
IE=100μA
6.0
8.0
V
VCE(SAT)
IC=100mA, IB=5mA
22
50
mV
VCE(SAT)
IC=2.0A, IB=100mA
135
170
mV
VCE(SAT)
IC=5.0A, IB=500mA
340
mV
VBE(SAT)
IC=5.0A, IB=500mA
1.25
V
SOT-223 CASE
Central
Semiconductor Corp.
TM
R1 (30-January 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT853 type
is
a
high
current
NPN
silicon
transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage and high current
amplifier applications.
MARKING CODE: FULL PART NUMBER
PNP complement: CZT953
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)




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