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1PS79SB10 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. 1PS79SB10
Description  Schottky barrier diode
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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1PS79SB10 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1998 Jul 16
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB10
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
continuous forward voltage
see Fig.2
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
continuous reverse current
VR = 25 V; note 1; see Fig.3
2
µA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.4
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
450
K/W


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