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1PS76SB70 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS76SB70 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1998 Jul 16 3 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD323 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF continuous forward voltage see Fig.2 IF = 1 mA 410 mV IF = 10 mA 750 mV IF =15mA 1 V IR continuous reverse current VR = 50 V; note 1; see Fig.3 100 nA VR = 70 V; note 1; see Fig.3 10 µA Cd diode capacitance VR = 0 ; f = 1 MHz; see Fig.5 2 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
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