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1PS76SB10 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS76SB10 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page  1996 Oct 14 3 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB10 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD323 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 240 mV IF = 1mA 320 mV IF =10mA 400 mV IF =30mA 500 mV IF = 100 mA 800 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 µA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.4 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
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