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CPD04 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD04 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series GEOMETRY PROCESS DETAILS BACKSIDE CATHODE R2 (16- September 2003) Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GROSS DIE PER 4 INCH WAFER 18,080 Central Semiconductor Corp. TM PROCESS CPD04 General Purpose Rectifier 500 mA Glass Passivated Rectifier Chip |
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