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CP316 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CP316 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page Central Semiconductor Corp. TM PROCESS CP316 Small Signal Transistor NPN - High Voltage Transistor Chip PRINCIPAL DEVICE TYPES CMPT5551 CXT5551 CZT5551 2N5551 Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com BACKSIDE COLLECTOR GEOMETRY R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 29,250 |
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