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CMST6427E Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CMST6427E
Description  ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON NPN DARLINGTON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CMST6427E Datasheet(HTML) 1 Page - Central Semiconductor Corp

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CMST6427E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST6427E is an
Enhanced Specification, SUPERmini™, NPN Silicon
Darlington Transistor. High DC Current gains, coupled
with a Low Saturation Voltage, make this an excellent
choice for industrial/consumer applications where
operational efficiency and small size are top priority.
MARKING CODE: C46
APPLICATIONS:
• Motor drivers
• Relay drivers
• Pre-amplifier input applications
• Voltage regulator controls
FEATURES:
• High current (500mA max)
• High DC current gain (15k min)
• Low saturation voltage (VCE(SAT)=0.8V max)
• High input impedance
• SUPERmini™ SOT-323 surface mount package
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCES
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
12
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
275
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
455
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=30V
100
nA
ICEO
VCE=25V
100
nA
IEBO
VBE=10V
100
nA
BVCBO
IC=100µA
60
V
BVCES
IC=100µA
60
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10µA
14
V
VCE(SAT)
IC=50mA, IB=0.5mA
0.80
V
VCE(SAT)
IC=100mA, IB=0.1mA
0.85
V
VCE(SAT)
IC=500mA, IB=0.5mA
1.0
V
♦ Enhanced specification
SOT-323 CASE
R1 (9-February 2010)
www.centr a lsemi.com


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