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1N4151 Datasheet(PDF) 2 Page - NXP Semiconductors |
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1N4151 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Jun 01 2 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 50 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 600 mA and 450 mA respectively. APPLICATIONS • High-speed switching • 1N4150: general purpose use in computer and industrial applications • 1N4151: military and industrial applications. DESCRIPTION The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. Fig.1 Simplified outline (SOD27; DO-35) and symbol. The marking band indicates the cathode. handbook, halfpage MAM246 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 50 V IF continuous forward current see Fig.2; note 1 1N4150 − 300 mA 1N4151 − 200 mA IFRM repetitive peak forward current 1N4150 − 600 mA 1N4151 − 450 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 4A t=1ms − 1A t=1s − 0.5 A Ptot total power dissipation Tamb =25 °C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C |
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