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1N4148 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 1N4148
Description  High-speed diodes
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1N4148 Datasheet(HTML) 2 Page - NXP Semiconductors

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1999 May 25
2
Philips Semiconductors
Product specification
High-speed diodes
1N4148; 1N4448
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching.
DESCRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
75
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
200
mA
IFRM
repetitive peak forward current
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
500
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C


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