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CMLM7405 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CMLM7405
Description  MULTI DISCRETE MODULE™ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CMLM7405 Datasheet(HTML) 1 Page - Central Semiconductor Corp

   
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MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)
SYMBOL
UNITS
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
MAXIMUM RATINGS D1: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
≤ 1ms
IFRM
3.5
A
Forward Surge Current, tp = 8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100µA
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100µA
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
40
75
mV
VCE(SAT)
IC=200mA, IB=20mA
80
150
mV
VCE(SAT)
IC=500mA, IB=50mA
150
250
mV
VCE(SAT)
IC=800mA, IB=80mA
220
400
mV
VCE(SAT)
IC=1.0A, IB=100mA
275
450
mV
VBE(SAT)
IC=800mA, IB=80mA
1.1
V
VBE(ON)
VCE=1.0V, IC=10mA
0.9
V
CMLM7405
MULTI DISCRETE MODULE
SURFACE MOUNT
HIGH CURRENT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (23-March 2005)
DESCRIPTION:
The Central Semiconductor CMLM7405 is a single
PNP Transistor and Schottky Diode packaged in a
space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM3405
• Combination High Current Low VCE (SAT)
Transistor and Low VF Schottky Diode.
MARKING CODES: C57
TM


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