MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

DC Blocking Voltage

VR

40

V

RMS Reverse Voltage

VR(RMS)

28

V

Average Forward Current

IO

1.0

A

Peak Forward Surge Current

IFSM

20

A

Power Dissipation

PD

1.2

W

Operating Junction

Temperature Range

TJ

-50 to +125

°C

Storage Temperature Range

Tstg

-50 to +150

°C

Thermal Resistance

ΘJA

85

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

TYP

MAX

UNITS

IR

VR=40V

20

50

µA

IR

VR=40V, TA=100°C

5.0

20

mA

VF

IF=500mA

360

380

mV

VF

IF=1.0A

390

440

mV

CJ

VR=4.0V, f=1.0MHz

150

pF

CBRHDSH1-40L

HIGH DENSITY

1.0 AMP DUAL IN LINE

LOW VF

SCHOTTKY BRIDGE RECTIFIER

HD DIP CASE

Central

Semiconductor Corp.

TM

R1 (23-May 2006)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CBRHDSH1-40L type is a full wave bridge

rectifier mounted in a durable epoxy surface

mount molded case, utilizing glass passivated

chips.

MARKING CODE: CSH1