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CBAT754A Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CBAT754A Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 30 V Continuous Forward Current IF 200 mA Peak Repetitive Forward Current IFRM 300 mA Forward Surge Current, tp=10ms IFSM 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 µA VF IF=0.1mA 200 mV VF IF=1.0mA 260 mV VF IF=10mA 340 mV VF IF=30mA 420 mV VF IF=100mA 500 mV Cd VR=1.0V, f=1.0 MHz 10 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CBAT754 CBAT754A CBAT754C CBAT754S SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE Central Semiconductor Corp. TM R0 (27-January 2005) DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT754 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. CBAT754: SINGLE MARKING CODE: C2K CBAT754A: DUAL, COMMON ANODE MARKING CODE: C2LA CBAT754C: DUAL, COMMON CATHODE MARKING CODE: C2MC CBAT754S: DUAL, IN SERIES MARKING CODE: C2NS |
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