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STK0460P Datasheet(PDF) 3 Page - AUK corp |
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STK0460P Datasheet(HTML) 3 Page - AUK corp |
3 / 8 page KSD-T0P001-000 3 STK0460P Electrical Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 600 - - V Gate-threshold voltage VGS(th) ID=250µA, VDS= VGS 2.0 - 4.0 V Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 µA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=2.0A - 1.9 2.5 Ω Forward transfer admittance ④ gfs VDS=10V, ID=2.0A - 3.0 - S Input capacitance Ciss - 520 780 Output capacitance Coss - 35 53 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 7.5 12 pF Turn-on delay time td(on) - 10 - Rise time tr - 42 - Turn-off delay time td(off) - 38 - Fall time tf VDD=300V, ID=4A RG=25Ω ③④ - 46 - ns Total gate charge Qg - 16 24 Gate-source charge Qgs - 2.8 4.2 Gate-drain charge Qgd VDS=300V, VGS=10V ID=4A ③④ - 5.5 8.3 nC Source-Drain Diode Ratings and Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current IS - - 4 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 16 A Forward voltage ④ VSD VGS=0V, IS=4A - - 1.4 V Reverse recovery time trr - 310 - ns Reverse recovery charge Qrr Is=4A dis/dt=100A/us - 2.26 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=17mH, IAS=4A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
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