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STK0240F Datasheet(PDF) 3 Page - AUK corp |
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STK0240F Datasheet(HTML) 3 Page - AUK corp |
3 / 8 page KSD-T0O013-000 3 STK0240F Electrical Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 400 - - V Gate-threshold voltage VGS(th) ID=250µA, VDS= VGS 3.0 - 5.0 V Drain-source leakage current IDSS VDS=400V, VGS=0V - - 1 µA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=1.0A - 4.2 5.0 Ω Forward transfer admittance ④ gfs VDS=10V, ID=1.0A - 1.4 - S Input capacitance Ciss - 127 190 Output capacitance Coss - 25 37.5 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 4.9 7.4 pF Turn-on delay time td(on) - 8.5 - Rise time tr - 3.9 - Turn-off delay time td(off) - 9 - Fall time tf VDD=200V, VGS=10V ID=2.0A, RG=25Ω ③④ - 3.9 - ns Total gate charge Qg - 4.6 6.9 Gate-source charge Qgs - 1.1 - Gate-drain charge Qgd VDD=200V, VGS=10V ID=2.0A ③④ - 1.7 - nC Source-Drain Diode Ratings and Characteristics (Tc=25 °C) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current IS - - 2 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 8 A Forward voltage ④ VSD VGS=0V, IS=2.0A - - 1.4 V Reverse recovery time trr - 180 - ns Reverse recovery charge Qrr Is=2.0A, VGS=0V dis/dt=100A/us - 0.64 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=27mH, IAS=2.0A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
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