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APM4538K Datasheet(PDF) 2 Page - Anpec Electronics Coropration

Part No. APM4538K
Description  Dual Enhancement Mode MOSFET (N-and P-Channel)
Download  13 Pages
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Maker  ANPEC [Anpec Electronics Coropration]
Homepage  http://www.anpec.com.tw
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APM4538K Datasheet(HTML) 2 Page - Anpec Electronics Coropration

 
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Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
2
APM4538K
Absolute Maximum Ratings (T
A = 25°C unless otherwise noted)
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Symbol
Parameter
N Channel
P Channel
Unit
VDSS
Drain-Source Voltage
36
-36
VGSS
Gate-Source Voltage
±16
±16
V
ID*
Continuous Drain Current
5
-4
IDM*
Pulsed Drain Current
VGS=
±10V
20
-16
A
IS*
Diode Continuous Forward Current
1.7
-1.7
A
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
-55 to 150
°C
TA=25°C
2
PD*
Power Dissipation
TA=100°C
0.8
W
RθJA*
Thermal Resistance-Junction to Ambient
62.5
°C/W
Note:
*Surface Mounted on 1in
2 pad area, t
≤ 10sec.
APM4538K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
VGS=0V, IDS=250
µA
N-Ch
36
BVDSS
Drain-Source Breakdown
Voltage
VGS=0V, IDS=-250
µA
P-Ch
-36
V
VDS=30V, VGS=0V
1
TJ=85
°C
N-Ch
30
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain
Current
TJ=85
°C
P-Ch
-30
µA
VDS=VGS, IDS=250
µA
N-Ch
0.7
1.1
1.5
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250
µA
P-Ch
-1
-1.5
-2
V
N-Ch
±100
IGSS
Gate Leakage Current
VGS=±16V, VDS=0V
P-Ch
±100
nA
VGS=10V, IDS=5A
N-Ch
50
65
VGS=-10V, IDS=-4A
P-Ch
60
80
VGS=4.5V, IDS=4A
N-Ch
60
80
RDS(ON)
a
Drain-Source On-State
Resistance
VGS=-4.5V, IDS=-3A
P-Ch
80
100
m


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