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DCX122TH-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DCX122TH-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page DS30429 Rev. 2 - 2 2 of 4 DCX (LO-R1) H www.diodes.com Electrical Characteristics NPN Section R1, R2 Types @ TA = 25 °C unless otherwise specified Maximum Ratings PNP Section @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage VCC -50 V Input Voltage DCX122LH DCX142JH VIN +5 to -6 +5 to -6 V Input Voltage DCX122TH DCX142TH VEBO (MAX) -5 V Output Current All IC -100 mA Power Dissipation (Note 1, 2) Pd 150 mW Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 833 °C/W Operating and Storage and Temperature Range Tj,TSTG -55 to +150 °C Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. NPN Section, PNP Section, or maximum combined. Characteristic Symbol Min Typ Max Unit Test Condition Input Voltage DCX122LH DCX142JH Vl(off) 0.3 0.3 ¾¾ V VCC = 5V, IO = 100 mA DCX122LH DCX142JH Vl(on) ¾¾ 2.0 2.0 V VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA Output Voltage VO(on) ¾¾ 0.3V V IO/Il = 5mA/0.25mA Input Current DCX122LH DCX142JH Il ¾¾ 28 13 mA VI = 5V Output Current IO(off) ¾¾ 0.5 mA VCC = 50V, VI = 0V DC Current Gain DDCX122LH DDCX142JH Gl 56 56 ¾¾ ¾ VO = 5V, IO = 10mA Gain-Bandwidth Product* fT ¾ 200 ¾ MHz VCE = 10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics NPN Section R1-Only @ TA = 25 °C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ¾¾ V IC = 50 mA Collector-Emitter Breakdown Voltage BVCEO 40 ¾¾ V IC = 1mA Emitter-Base Breakdown Voltage DCX122TH DCX142TH BVEBO 5 ¾ ¾ V IE = 50 mA IE = 50 mA Collector Cutoff Current ICBO ¾¾ 0.5 mA VCB = 50V Emitter Cutoff Current DCX122TH DCX142TH IEBO ¾ ¾ ¾ 0.5 0.5 mA VEB = 4V Collector-Emitter Saturation Voltage VCE(sat) ¾¾ 0.3 V IC = 5mA, IB = 0.25mA DC Current Transfer Ratio DCX122TH DCX142TH hFE 100 100 250 250 600 600 ¾ IC = 1mA, VCE = 5V Gain-Bandwidth Product* fT ¾ 200 ¾ MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only |
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