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MUN5111W Datasheet(PDF) 2 Page - E-Tech Electronics LTD

Part No. MUN5111W
Description  Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  ETL [E-Tech Electronics LTD]
Homepage  http://e-tech.com.hk
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MUN5111W Datasheet(HTML) 2 Page - E-Tech Electronics LTD

 
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MUN5111dw–2/11
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R 1(K)
R 2(K)
Shipping
MUN5111DW1T1
SOT–363
0A
10
10
3000/Tape & Reel
MUN5112DW1T1
SOT–363
0B
22
22
3000/Tape & Reel
MUN5113DW1T1
SOT–363
0C
47
47
3000/Tape & Reel
MUN5114DW1T1
SOT–363
0D
10
47
3000/Tape & Reel
MUN5115DW1T1 (Note 3.)
SOT–363
0E
10
3000/Tape & Reel
MUN5116DW1T1 (Note 3.)
SOT–363
0F
4.7
3000/Tape & Reel
MUN5130DW1T1 (Note 3.)
SOT–363
0G
1.0
1.0
3000/Tape & Reel
MUN5131DW1T1 (Note 3.)
SOT–363
0H
2.2
2.2
3000/Tape & Reel
MUN5132DW1T1 (Note 3.)
SOT–363
0J
4.7
4.7
3000/Tape & Reel
MUN5133DW1T1 (Note 3.)
SOT–363
0K
4.7
47
3000/Tape & Reel
MUN5134DW1T1 (Note 3.)
SOT–363
0L
22
47
3000/Tape & Reel
MUN5135DW1T1 (Note 3.)
SOT–363
0M
2.2
47
3000/Tape & Reel
MUN5136DW1T1 (Note 3.)
SOT–363
0N
100
100
3000/Tape & Reel
MUN5137DW1T1 (Note 3.)
SOT–363
0P
47
22
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = –50 V, I E = 0)
I CBO
–100
nAdc
Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0)
I CEO
–500
nAdc
Emitter-Base Cutoff Current
MUN5111DW1T1
(V EB = –6.0 V, I C = 0)
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
MUN5111DW1T1
Series
I EBO
–0.5
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
–0.05
–0.13
mAdc
Collector-Base Breakdown Voltage (I C = –10
µA, I
E = 0)
V (BR)CBO
–50
Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO
–50
Vdc
ON CHARACTERISTICS (Note 4.)
Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA)
V CE(sat)
–0.25
Vdc
(I C= –10mA, I B= –5mA)
MUN5130DW1T1/MUN5131DW1T1
(I C= –10mA, IB= –1mA)
MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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