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CM15MD-12H Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. CM15MD-12H
Description  MEDIUM POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM15MD-12H Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
Tf = 25°C
Rth(j – f) = 2.8°C/ W
101
10–3
10–5
10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 7
23 5 7
23 5 7
23 5 7
101
10–2
10–1
100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 5 7
23 5 7
Single Pulse
Tf = 25°C
Rth(j – f) = 3.5°C/ W
101
103
7
5
3
2
100
23
5 7
101
102
7
5
3
2
23
5 7
102
td(off)
VCC = 300V
VGE = ±15V
RG = 42
Tj = 125°C
td(on)
tf
tr
101
103
7
5
3
2
100
23
5 7
101
102
7
5
3
2
23
5 7
102
10–1
101
7
5
3
2
100
7
5
3
2
– di/dt = 30A / µs
Tj = 25°C
trr
Irr
20
16
12
8
4
0
60
50
10
0
20
30
40
18
14
10
6
2
VCC = 200V
VCC = 300V
IC = 15A
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
TIME (s)
VGE – GATE CHARGE
(TYPICAL)
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
MITSUBISHI IGBT MODULES
CM15MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE


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