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HM5117400B Datasheet(PDF) 6 Page - Hitachi Semiconductor

Part No. HM5117400B
Description  4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HM5117400B Datasheet(HTML) 6 Page - Hitachi Semiconductor

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HM5117400B Series
6
DC Characteristics (Ta = 0 to +70 C, V
CC = 5 V
10%, V
SS = 0 V)
HM5117400B
-6
-7
-8
Parameter
Symbol Min
Max Min
Max Min
Max Unit
Test Conditions
-only refresh current
*2
I
CC3
110
100
90
mAt
RC = min
Standby current
*1
I
CC5
5
5
5
mA
= V
IH,
= V
IL
Dout = enable
-before-
refresh
current
I
CC6
110
100
90
mAt
RC = min
Fast page mode current
*1, *3
I
CC7
80
70
65
mAt
PC = min
Battery backup currentI
CC10
350
350
350
A
CMOS interface
Dout = High-Z
CBR refresh: t
RC = 62.5
s
t
RAS
0.3 s
Input leakage currentI
LI
–10
10
–10
10
–10
10
A
0 V
Vin
7 V
Output leakage currentI
LO
–10
10
–10
10
–10
10
A
0 V
Vout
7 V
Dout = disable
Output high voltageV
OH
2.4V
CC
2.4V
CC
2.4V
CC
V
High Iout =
–5 mA
Output low voltageV
OL
0
0.4
0
0.4
0
0.4
V
Low Iout = 4.2 mA
Notes: 1.I
CC depends on output load condition when the device is selected.
I
CC max is specified at the output
open condition.
2. Address can be changed once or less while
= V
IL.
3. Address can be changed once or less while
= V
IH.
Capacitance (Ta = 25 C, V
CC = 5 V
10%)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)C
I1
5
pF1
Input capacitance (Clocks)C
I2
7
pF1
Output capacitance (Data-in, Data-out)C
I/O
7
pF
1, 2
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
= V
IH to disable Dout.


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