GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

0105-100

100 Watts, 28 Volts, Class AB

Defcom 100 - 500

MHz

GENERAL DESCRIPTION

The 0105-100 is a double input matched COMMON EMITTER broadband

transistor specifically intended for use in the 100-500 MHz frequency band. It

may be operated in Class AB or C. Gold metallization and silicon diffused

resistors ensure ruggedness and high reliability.

CASE OUTLINE

55JT, Style 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

270 Watts

o

Maximum Voltage and Current

BVces

Collector to Emiter Voltage

65 Volts

BVebo

Emitter to Base Voltage

4.0 Volts

Ic

Collector Current

16 A

Maximum Temperatures

Storage Temperature

- 40 to +150 C

o

Operating Junction Temperature

+200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

VSWR

Power Output

Power Input

Power Gain

Efficiency

Load Mismatch Tolerance

F = 500 MHz

Vcc = 28 Volts

100

6.2

18

7.5

50

24

5:1

Watts

Watts

dB

%

BVebo

BVces

BVceo

Cob

2

h

FE

Emitter to Base Breakdown

Collector to Emitter Breakdown

Collector to Emitter Breakdown

Output Capacitance

DC - Current Gain

Thermal Resistance

Ie = 5 mA

Ic = 100 mA

Ie = 50 mA

Vcb = 28 V, F = 1 MHz

Vce = 5 V, Ic = 500 mA

4.0

60

31

10

140

0.65

Volts

Volts

Volts

pF

C/W

o

Note 2: Both sides together, all other specifications each side tested separately

Issue August 1996