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APTM120U100D-ALN Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM120U100D-ALN Datasheet(HTML) 2 Page - Advanced Power Technology |
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APTM120U100D-AlN APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA 1200 V VGS = 0V,VDS = 1200V Tj = 25°C 1 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 4 mA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 58A 100 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 20mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 28.9 Coss Output Capacitance 4.4 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.8 nF Qg Total gate Charge 1100 Qgs Gate – Source Charge 128 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 116A 716 nC Td(on) Turn-on Delay Time 20 Tr Rise Time 17 Td(off) Turn-off Delay Time 245 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω 62 ns Eon Turn-on Switching Energy 5 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 4.6 mJ Eon Turn-on Switching Energy 9.2 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 5.6 mJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1200 V IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 180 A IF = 180A 2 2.5 IF = 360A 2.3 VF Diode Forward Voltage IF = 180A Tj = 125°C 1.8 V Tj = 25°C 370 trr Reverse Recovery Time IF = 180A VR = 800V di/dt = 800A/µs Tj = 125°C 500 ns Tj = 25°C 3.9 Qrr Reverse Recovery Charge IF = 180A VR = 800V di/dt = 800A/µs Tj = 125°C 20.7 µC |
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