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APTM120U10SA Datasheet(PDF) 3 Page - Advanced Power Technology |
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APTM120U10SA Datasheet(HTML) 3 Page - Advanced Power Technology |
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APTM120U10SA APT website – http://www.advancedpower.com 3 – 6 Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 200 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 750 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 180 A IF = 180A 2.5 3 IF = 360A 3 VF Diode Forward Voltage IF = 180A Tj = 125°C 1.8 V Tj = 25°C 265 trr Reverse Recovery Time IF = 180A VR = 800V di/dt = 600A/µs Tj = 125°C 350 ns Tj = 25°C 1.7 Qrr Reverse Recovery Charge IF = 180A VR = 800V di/dt = 600A/µs Tj = 125°C 8.7 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.038 Series diode 0.46 RthJC Junction to Case Parallel diode 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 °C To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g SP6 Package outline (dimensions in mm) |
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