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APTM120U10SA Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM120U10SA Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page 
APTM120U10SA APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 1200V Tj = 25°C 1 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 4 mA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 58A 100 120 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 20mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 28.9 Coss Output Capacitance 4.4 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.8 nF Qg Total gate Charge 1100 Qgs Gate – Source Charge 128 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 116A 716 nC Td(on) Turn-on Delay Time 20 Tr Rise Time 17 Td(off) Turn-off Delay Time 245 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω 62 ns Eon Turn-on Switching Energy 5 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 4.6 mJ Eon Turn-on Switching Energy 9.2 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω 5.6 mJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC |
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