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APTM120U10SA Datasheet(PDF) 2 Page - Advanced Power Technology

Part No. APTM120U10SA
Description  Single switch Series & parallel diodes MOSFET Power Module
Download  6 Pages
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Maker  ADPOW [Advanced Power Technology]
Homepage  http://www.advpowertech.com
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APTM120U10SA Datasheet(HTML) 2 Page - Advanced Power Technology

   
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APTM120U10SA
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 1200V
Tj = 25°C
1
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
4
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 58A
100
120
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 20mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.9
Coss
Output Capacitance
4.4
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.8
nF
Qg
Total gate Charge
1100
Qgs
Gate – Source Charge
128
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 116A
716
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
17
Td(off)
Turn-off Delay Time
245
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2Ω
62
ns
Eon
Turn-on Switching Energy
5
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
4.6
mJ
Eon
Turn-on Switching Energy
9.2
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
5.6
mJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
µA
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/µs
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/µs
Tj = 125°C
500
nC


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